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EPC2203

Part No EPC2203
Manufacturer EPC
Catalog Transistors - FETs, MOSFETs - RF
Description GANFET N-CH 80V 1.7A DIE  /  N-Channel 80 V 1.7A (Ta) Surface Mount Die
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr EPC
Series Automotive, AEC-Q101, eGaN®
Package Tape & Reel
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 0.83 nC @ 5 V
Vgs (Max) +5.75V, -4V
Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 50 V
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package Die
Package / Case Die
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0040
Other Names 917-1200-1,917-1200-2,917-1200-6
Standard Package 2,500
Win Source Part Number 1146122-EPC2203
Ultra Librarian 3D Model Ultra Librarian EPC2203 CAD Model

Description

The EPC2203 is a N-Channel GaNFET (Gallium Nitride) transistor that is a part of the automotive, AEC-Q101, eGaN series.

  • Series: Automotive, AEC-Q101, eGaN
  • Win Source Part Number: 1146122-EPC2203
  • Mounting: SMD (SMT)
  • Package: Die
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 600μA
  • Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
  • Vgs (Max): +5.75V, -4V
  • Operating Temperature: -40°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7234 $50.6380
170+ $0.5936 $100.9120
265+ $0.5751 $152.4015
360+ $0.5565 $200.3400
465+ $0.5380 $250.1700
625+ $0.4823 $301.4375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,780 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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