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EPC2212

Name: EPC2212
Brand: EPCOS (TDK)
SKU: 1325232
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	EPC2212
Manufacturer	EPCOS (TDK)
Catalog	Transistors - FETs, MOSFETs - RF
Description	GANFET N-CH 100V 18A DIE / N-Channel 100 V 18A (Ta) Surface Mount Die
Datasheet	EPC2212 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	EPC
Packaging	Reel - TR
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	18A
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id	2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 5 V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	407 pF @ 50 V
Temperature Range - Operating	-40°C ~ 150°C (TJ)
Mounting	Surface Mount
Supplier Device Package	Die
Case / Package	Die
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0040
Other Part Number	917-1211-1,917-1211-2,917-1211-6
Standard Package	2,500
Win Source Part Number	1325232-EPC2212
Ultra Librarian 3D Model	Ultra Librarian EPC2212 CAD Model

Alternative Products

Description

The EPC2212 transistor is a N-channel GaNFET (Gallium Nitride) that has a maximum drain to source voltage rating of 100V.

Maximum Continuous Drain Current: 18A @ 25°C
Rds On (Max): 13.5mOhm @ 11A and 5V
Vgs(th) (Max): 2.5V @ 3mA
Gate Charge (Qg) (Max): 4nC @ 5Vgs
Input Capacitance (Ciss) (Max): 407pF @ 50Vds
Drive Voltage (Max Rds On, Min Rds On): 5V
Package: die
Temperature Range: -40°C to 150°C (TJ)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
10+	$5.5009	$55.0090
23+	$4.5136	$103.8128
35+	$4.3726	$153.0410
48+	$4.2315	$203.1120
62+	$4.0905	$253.6110
82+	$3.6673	$300.7186

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 6,092 pieces

MOQ: 10 pcs

Order Increment : 1 pcs

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EPC2212

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