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BSM200GB120DLC

Part No BSM200GB120DLC
Manufacturer eupec GmbH
Catalog END - OF - LIFE
Description IGBT-Modules
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer eupec GmbH
Win Source Part Number 1154770-BSM200GB120DLC
Manufacturer Homepage www.eupec.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSM200GB120DLC CAD Model

Description

The BSM200GB120DLC is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by eupec GmbH, now part of Infineon Technologies. It's designed for high-power switching applications, offering efficient and reliable performance. The module integrates multiple IGBTs and diodes to achieve high current and voltage handling capabilities.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Welding equipment
  • Renewable energy systems (solar inverters, wind turbines)
  • Traction applications (electric vehicles, trains)

Features

  • Collector-Emitter Voltage (Vces): 1200V
  • Collector Current (Ic): 200A
  • IGBT Topology: Half-bridge
  • Fast Switching Speed: Optimized for high-frequency operation
  • Low Saturation Voltage: Reduces power dissipation and improves efficiency
  • Integrated Free-Wheeling Diodes: Provides reverse current protection
  • Isolated Baseplate: Simplifies thermal management and provides electrical isolation

Benefits

  • High Power Handling: Capable of switching large currents and voltages, making it suitable for demanding applications.
  • Efficient Operation: Low saturation voltage and fast switching speed minimize power losses.
  • Reliable Performance: Robust design ensures long-term reliability in harsh environments.
  • Simplified System Design: Integrated diodes and isolated baseplate reduce component count and simplify layout.
  • Improved Thermal Management: Isolated baseplate allows for efficient heat dissipation.

Technical Specifications

The BSM200GB120DLC is typically packaged in a standard industrial module package. The module's internal structure consists of IGBT chips and diodes interconnected to form a half-bridge configuration. The gate driver requirements depend on the specific application, but typically involve a gate voltage of around 15V. The module is designed to operate within a specific temperature range, typically from -40°C to +150°C. Detailed datasheets are available from Infineon Technologies, providing comprehensive information on electrical characteristics, thermal performance, and application guidelines. Due to its mature lifecycle, consider consulting with Infineon regarding suitable replacements for new designs.

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