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BS270

Part No BS270
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 400MA TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA)
Win Source Part Number 1024310-BS270
Popularity Medium
Supply and Demand Status Balance
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian BS270 CAD Model

Description

The BS270 is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild/ON Semiconductor. This transistor is designed for high-voltage, low-current switching applications. It's commonly used in circuits where a small control voltage is needed to switch a larger voltage or current.

Applications

  • High-voltage switching circuits.
  • Solid-state relays.
  • LED lighting drivers.
  • DC-DC converters.
  • Motor control circuits (low power).

Features

  • N-channel enhancement mode.
  • High drain-source voltage (VDS) rating.
  • Low gate threshold voltage.
  • Fast switching speed.
  • High input impedance.
  • Low on-resistance (RDS(on)).

Benefits

  • Ability to switch high voltages with a low control voltage.
  • Efficient switching performance.
  • Minimal gate drive current required.
  • Reduced power dissipation.
  • Simple to implement in switching circuits.

Additional Details

The BS270 is typically available in a TO-92 package, making it suitable for through-hole mounting. Key electrical characteristics include the drain-source breakdown voltage, gate-source threshold voltage, and drain current. The high drain-source voltage rating makes it suitable for applications involving higher voltage rails. The RDS(on) parameter indicates the resistance between the drain and source when the MOSFET is fully on, which impacts the power dissipation. It's crucial to ensure that the transistor operates within its safe operating area (SOA) to prevent damage.

The BS270 provides a reliable and cost-effective solution for many switching applications requiring high voltage handling capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1780 $57.8500
795+ $0.1461 $116.1495
1,225+ $0.1415 $173.3375
1,690+ $0.1370 $231.5300
2,185+ $0.1324 $289.2940
2,920+ $0.1187 $346.6040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,900 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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