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FCD225N80Z

Part No FCD225N80Z
Manufacturer Fairchild/ON Semiconductor
Catalog Miscellaneous
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Categories Uncategorized
Manufacturer Fairchild/ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 823181-FCD225N80Z
Ultra Librarian 3D Model Ultra Librarian FCD225N80Z CAD Model

Description

The FCD225N80Z is an 800V N-Channel MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is designed for high-voltage, high-speed switching applications. It leverages advanced power MOSFET technology to achieve low on-resistance and gate charge, improving efficiency and reducing power dissipation.

Applications:

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • High-voltage DC-DC converters
  • Motor control circuits

Features:

  • High voltage rating (800V)
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Low gate charge (Qg)
  • Avalanche rated
  • RoHS compliant

Benefits:

  • Improved efficiency in power conversion circuits.
  • Reduced power dissipation, leading to cooler operation.
  • Increased switching speed, enabling higher frequency operation.
  • Enhanced reliability in high-voltage applications.
  • Simplified thermal management due to low RDS(on).
  • Compliant with environmental regulations.

Additional Details:

The FCD225N80Z is characterized by its low on-resistance (RDS(on)), which minimizes conduction losses, leading to improved efficiency and reduced heat generation. Its fast switching speed reduces switching losses, enabling higher frequency operation and smaller component sizes. The low gate charge (Qg) reduces the drive power requirements, further contributing to efficiency. This MOSFET's avalanche rating ensures it can withstand transient voltage spikes, enhancing its reliability in demanding applications. Typically available in a TO-247 package for effective thermal dissipation.

When using the FCD225N80Z, consider the gate drive requirements, ensuring the gate voltage is within the specified range to achieve optimal performance. Adequate heat sinking is essential to maintain junction temperature within safe limits, especially at higher power levels. It's crucial to follow proper PCB layout practices to minimize parasitic inductance and capacitance, which can affect switching performance and increase EMI. Review the datasheet for detailed electrical characteristics, thermal specifications, and application guidelines before implementation.

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