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Same model may have multiple batches, images only for reference.
FCD7N60TF Real Image
Same model may have multiple batches, images only for reference.

FCD7N60TF

Part No FCD7N60TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 920pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1037876-FCD7N60TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FCD7N60TF CAD Model

Description

The FCD7N60TF is a MOSFET transistor designed for use in power management applications.

  • Polarity: N-Channel
  • Power Dissipation: 83W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 7A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 30nC @ 10V
  • Category: Discrete Semiconductor Products
  • Package: D-Pak
  • Popularity: Medium
  • Status: Obsolete(EOL)

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