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FCD9N60N

Part No FCD9N60N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1173562-FCD9N60N
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FCD9N60N CAD Model

Description

The FCD9N60N is a 600V N-Channel MOSFET from Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is designed for high-voltage, high-speed switching applications where efficiency and reliability are crucial. It leverages advanced power MOSFET technology to minimize on-resistance and gate charge, resulting in reduced power losses and improved performance.

Applications:

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Lighting ballasts
  • Motor control circuits

Features:

  • High voltage rating (600V)
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Low gate charge (Qg)
  • Avalanche ruggedness
  • RoHS compliant

Benefits:

  • High efficiency in power conversion applications.
  • Reduced power dissipation, resulting in cooler operation.
  • Improved switching performance, enabling higher frequency operation.
  • Enhanced reliability in demanding environments.
  • Simplified thermal management due to low RDS(on).
  • Compliance with environmental standards.

Additional Details:

The FCD9N60N features low on-resistance (RDS(on)), which minimizes conduction losses, leading to increased efficiency and reduced heat generation. The fast switching speed reduces switching losses, allowing for higher frequency operation and smaller component sizes. Its low gate charge (Qg) reduces the drive power requirements, contributing to overall system efficiency. The avalanche ruggedness ensures the MOSFET can withstand transient voltage spikes, enhancing its reliability. It is commonly available in a TO-220F package, which provides good thermal dissipation capabilities.

When implementing the FCD9N60N, it is important to ensure the gate drive voltage is within the specified range for optimal performance. Proper heat sinking is necessary to maintain the junction temperature within acceptable limits, especially at higher power levels. It is also crucial to follow good PCB layout practices to minimize parasitic inductance and capacitance, which can affect switching performance and increase electromagnetic interference (EMI). Consult the datasheet for detailed electrical characteristics, thermal specifications, and application guidelines prior to use.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9496 $58.4880
75+ $1.6008 $120.0600
115+ $1.5500 $178.2500
155+ $1.5003 $232.5465
200+ $1.4507 $290.1400
270+ $1.3005 $351.1350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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