EN
  • EN
  • DE

FCD9N60N

Part No FCD9N60N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

RoHS State Request Verification
Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1173562-FCD9N60N
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FCD9N60N CAD Model

Description

The FCD9N60N is a 600V N-Channel MOSFET from Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is designed for high-voltage, high-speed switching applications where efficiency and reliability are crucial. It leverages advanced power MOSFET technology to minimize on-resistance and gate charge, resulting in reduced power losses and improved performance.

Applications:

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Lighting ballasts
  • Motor control circuits

Features:

  • High voltage rating (600V)
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Low gate charge (Qg)
  • Avalanche ruggedness
  • RoHS compliant

Benefits:

  • High efficiency in power conversion applications.
  • Reduced power dissipation, resulting in cooler operation.
  • Improved switching performance, enabling higher frequency operation.
  • Enhanced reliability in demanding environments.
  • Simplified thermal management due to low RDS(on).
  • Compliance with environmental standards.

Additional Details:

The FCD9N60N features low on-resistance (RDS(on)), which minimizes conduction losses, leading to increased efficiency and reduced heat generation. The fast switching speed reduces switching losses, allowing for higher frequency operation and smaller component sizes. Its low gate charge (Qg) reduces the drive power requirements, contributing to overall system efficiency. The avalanche ruggedness ensures the MOSFET can withstand transient voltage spikes, enhancing its reliability. It is commonly available in a TO-220F package, which provides good thermal dissipation capabilities.

When implementing the FCD9N60N, it is important to ensure the gate drive voltage is within the specified range for optimal performance. Proper heat sinking is necessary to maintain the junction temperature within acceptable limits, especially at higher power levels. It is also crucial to follow good PCB layout practices to minimize parasitic inductance and capacitance, which can affect switching performance and increase electromagnetic interference (EMI). Consult the datasheet for detailed electrical characteristics, thermal specifications, and application guidelines prior to use.

You May Also Be Interested in

Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Panjit
Advanced Trench Process Technology
Lowest to $0.2356
Analog Devices Inc.
Dual 5 A, 20 V Synchronous Step-Down
Need more? Email Us
SANYO Semiconductor (U.S.A) Corporation
Ultrahigh-Speed Switching Applications
Lowest to $27.0651
NXP / Nexperia
N-channel dual-gate MOS-FETs
Lowest to $1.1642
Hitachi, Ltd
Silicon N-Channel MOS FET UHF Power Amplifier
Need more? Email Us
Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310
Fairchild/ON Semiconductor
200V N-Channel MOSFET
Need more? Email Us
ON Semiconductor
Ultrahigh-Speed Switching Applications
Lowest to $0.4123

Top Sellers

Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.8016
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $6.6527
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $2.3760
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $4.7519
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.3955
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $14.2557
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Lowest to $19.0076
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.2166
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0214

Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9496 $58.4880
75+ $1.6008 $120.0600
115+ $1.5500 $178.2500
155+ $1.5003 $232.5465
200+ $1.4507 $290.1400
270+ $1.3005 $351.1350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Estimate Shipping
Enter your destination to get a shipping estimate
*
Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
Expected Shipping Date
Ship today if order in (HKT)
Supplier Lead-Time Call for availability
Estimate shipping fee
Enter your destination to get a shipping estimate
Estimate Shipping Fee

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess