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Same model may have multiple batches, images only for reference.
FCP190N60_GF102 Real Image
Same model may have multiple batches, images only for reference.

FCP190N60_GF102

Part No FCP190N60_GF102
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 74nC @ 10V
Max Input Capacitance 2950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 199 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1037893-FCP190N60_GF102
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FCP190N60_GF102 CAD Model

Description

The Fairchild/ON Semiconductor FCP190N60_GF102 is a N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 20.2A (Tc)
  • Maximum Rds On: 199 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 208W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220
  • Mounting: Through Hole
  • Maximum Input Capacitance: 2950pF @ 25V
  • Max Gate Charge: 74nC @ 10V
  • Category: Discrete Semiconductor Products

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