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Same model may have multiple batches, images only for reference.
FCP380N60E Real Image
Same model may have multiple batches, images only for reference.

FCP380N60E

Part No FCP380N60E
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 106W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204077-FCP380N60E
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FCP380N60E CAD Model

Description

FCP380N60E: Efficient Energy Management MOSFET

The FCP380N60E is an N-channel MOSFET known for its impeccable energy efficiency and reliability, perfect for demanding electronic projects.

  • Applications:
    • Battery-Powered Applications
    • Home Appliance Inverters
    • Data Center Power Supplies
  • Features and Benefits:
    • Minimized Losses with Low Gate Charge
    • Improved Switching Performance
    • High Electrical Stability
  • Additional Information:

    This device is engineered to provide outstanding current handling and minimal power loss, optimized for energy-conscious designs.

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