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Same model may have multiple batches, images only for reference.
FCU7N60TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FCU7N60TU

Part No FCU7N60TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A I2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 920pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1037927-FCU7N60TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FCU7N60TU CAD Model

Description

The FCU7N60TU MOSFET is a N-Channel polarity component that has a Drain-Source Breakdown Voltage of 600V and a Continuous Drain Current of 7A (Tc) at 25°C.

  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 3.5A, 10V
  • Power Dissipation (Max): 83W (Tc)
  • Package: I2PAK
  • Technology: MOSFET
  • Category: Discrete Semiconductor Products
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting: through hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3807 $62.1315
105+ $1.1330 $118.9650
160+ $1.0975 $175.6000
220+ $1.0621 $233.6620
285+ $1.0267 $292.6095
380+ $0.9205 $349.7900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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