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Same model may have multiple batches, images only for reference.
FDA2712 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDA2712

Part No FDA2712
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 64A TO-3PN
Datasheet
FDA2712 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 129nC @ 10V
Max Input Capacitance 10175pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 357W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1037945-FDA2712
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDA2712 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance electronic component designed for use in various applications.

  • Maximum Power Dissipation: 357W (Tc)
  • Polarity: N-Channel
  • Use: Discrete semiconductor products
  • Drive Voltage: 10V (Max Rds On, Min Rds On)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 64A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-3PN (TO-3P-3, SC-65-3)
  • Maximum Rds On @ Id,Vgs: 34 mOhm @ 40A, 10V
  • Popularity: High
  • Supply and Demand: Balanced

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