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Same model may have multiple batches, images only for reference.
FDA33N25 Real Image
Same model may have multiple batches, images only for reference.

FDA33N25

Part No FDA33N25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 33A TO-3PN
Datasheet
FDA33N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 46.8nC @ 10V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 245W (Tc)
Maximum Rds On at Id,Vgs 94 mOhm @ 16.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1037946-FDA33N25
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FDA33N25 CAD Model

Description

The Fairchild/ON Semiconductor FDA33N25 is a MOSFET transistor.

  • Polarity: N-channel
  • Maximum Power Dissipation: 245W (Tc)
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current at 25°C: 33A (Tc)
  • Maximum Rds On at Id, Vgs: 94 mOhm @ 16.5A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 46.8nC @ 10V
  • Maximum Input Capacitance: 2200pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-3PN
  • Dimensions: TO-3P-3, SC-65-3
  • Supply and Demand Status: Sufficient
  • Pieces per Package: 450

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Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
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Availability: 1,500 pieces
MOQ: 15 pcs
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