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Same model may have multiple batches, images only for reference.
FDB024N06 Real Image
Same model may have multiple batches, images only for reference.

FDB024N06

Part No FDB024N06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A D2PAK
Datasheet
FDB024N06 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 226nC @ 10V
Max Input Capacitance 14885pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 395W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037955-FDB024N06
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB024N06 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET with the Win Source Part Number 1037955-FDB024N06 is a N-channel polarity electronic component.

  • Mounting Package: D2PAK (TO-263AB)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Maximum Rds On @ Id,Vgs: 2.4 mOhm @ 75A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 226nC @ 10V
  • Maximum Input Capacitance: 14885pF @ 25V
  • Maximum Power: 395W (Tc)
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6259 $60.1367
31+ $3.7957 $117.6667
48+ $3.6771 $176.5008
65+ $3.5585 $231.3025
84+ $3.4398 $288.9432
113+ $3.0840 $348.4920
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Availability: 34,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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