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FDB13AN06A0

Part No FDB13AN06A0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 62A TO-263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 62A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 001084-FDB13AN06A0
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB13AN06A0 CAD Model

Description

FDB13AN06A0 MOSFET

The FDB13AN06A0 is an N-channel MOSFET designed for efficiency and performance in switching applications, offering robust features for demanding environments.

Features and Benefits

  • Advanced trench technology to enhance performance.
  • Low input capacitance for faster switching speeds.
  • Rugged body diode for improved reliability.

Applications

  • Switch-mode power supplies
  • Audio amplifiers
  • LED lighting systems
  • Telecommunications equipment

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9305 $57.9150
75+ $1.5841 $118.8075
115+ $1.5345 $176.4675
160+ $1.4850 $237.6000
205+ $1.4356 $294.2980
270+ $1.2871 $347.5170
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 604 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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