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Same model may have multiple batches, images only for reference.
FDB2552_F085 Real Image
Same model may have multiple batches, images only for reference.

FDB2552_F085

Part No FDB2552_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 150V 5A TO-263AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 5A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 2800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037966-FDB2552_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB2552_F085 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a powerful N-Channel electronic component that is perfect for use in a wide range of applications.

  • Maximum Power Dissipation: 150W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Maximum Rds On at Id,Vgs: 36 mOhm @ 16A, 10V
  • Mounting Type: SMD (SMT)
  • Package: D2PAK (TO-263AB)
  • Temperature Range: -55°C to 175°C (TJ)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 51nC @ 10V
  • Maximum Input Capacitance: 2800pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,100 pieces
MOQ: 45 pcs
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