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Same model may have multiple batches, images only for reference.
IRL530A Real Image
Same model may have multiple batches, images only for reference.

IRL530A

Part No IRL530A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Advanced Power MOSFET
Datasheet
IRL530A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 24nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 755pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 62W (Tc)
Rds On (Maximum) @ Id, Vgs 120 mOhm @ 7A, 5V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3
RoHS State Request Verification
Win Source Part Number 1188507-IRL530A
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name IRL530A
Introduction Date June 07, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IRL530A CAD Model

Description

The IRL530A MOSFET is a high-performance N-channel MOSFET designed for use in discrete semiconductor products by Fairchild/ON Semiconductor.

  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 14A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge: 24nC @ 5V
  • Input Capacitance: 755pF @ 25V
  • Maximum Rds On: 120 mOhm @ 7A and 5V
  • Package: TO-220-3
  • Applications: Through-hole
  • Supply and demand status: Limited
  • Alternative parts (cross-reference): STP14NF10 and BUK95180-100A

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