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Same model may have multiple batches, images only for reference.
FDB3860 Real Image
Same model may have multiple batches, images only for reference.

FDB3860

Part No FDB3860
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 6.4A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.4A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1740pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 71W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 5.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 001097-FDB3860
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB3860 CAD Model

Description

FDB3860

With advanced technical specifications, the FDB3860 MOSFET offers excellent solutions for modern electronic applications, emphasizing power efficiency and robustness.

  • DC to DC converters
  • Uninterruptible power supplies (UPS)
  • Industrial motor drives

Features and Benefits:

  • Minimized on-state resistance
  • High current handling capability
  • Fast thermal recovery

Suitable for power-sensitive applications, the FDB3860 stands out for its capability to handle high currents, making it an ideal choice for industrial and consumer electronics.

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