The FDB8896-NL is an N-Channel PowerTrench® MOSFET designed for high-efficiency power conversion applications. Manufactured by Fairchild/ON Semiconductor, this device features optimized parameters to minimize conduction and switching losses, resulting in improved system performance.
Applications
- Synchronous Rectification
- DC-DC Conversion
- Point-of-Load (POL) Converters
- Battery Management Systems
- Load Switching
Features
- Max rDS(on) = 4.7 mΩ at VGS = 10V, ID = 25A
- Max rDS(on) = 7.5 mΩ at VGS = 4.5V, ID = 25A
- High Performance Technology for Extremely Low rDS(on)
- Low Miller Charge
- High Power and Current Handling Capability
- RoHS Compliant
Benefits
- Reduces power losses in power conversion circuits.
- Enables efficient operation at low gate drive voltages.
- Enhances system efficiency and reduces heat generation.
- Facilitates high-frequency switching with minimal losses.
- Suitable for high-current applications with its robust design.
Technical Specifications
The FDB8896-NL is an N-Channel enhancement mode MOSFET with a drain-source voltage (Vds) rating of 30V. It exhibits extremely low on-state resistance (rDS(on)) of 4.7 mΩ at VGS = 10V and 7.5 mΩ at VGS = 4.5V, both measured at a drain current (ID) of 25A. The device features a low Miller charge, contributing to improved switching performance. It is typically packaged in a Power 88 package for enhanced thermal performance. The gate threshold voltage typically falls between 1V and 3V.
This MOSFET is optimized for synchronous rectification in DC-DC converters and point-of-load applications, where minimizing conduction losses is critical for achieving high efficiency. Its low on-state resistance allows for efficient operation even at low gate drive voltages. The device's high power and current handling capability makes it suitable for demanding applications. Proper thermal management techniques are important to ensure the MOSFET remains within its safe operating area. Designers should consult the datasheet for detailed specifications and application recommendations.