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FDB9406_F085

Part No FDB9406_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 110A TO263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 138nC @ 10V
Max Input Capacitance 7710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 176W (Tj)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037998-FDB9406_F085
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDB9406_F085 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET with the part number 1037998-FDB9406_F085 is a N-Channel polarity device with a drain-source breakdown voltage of 40V.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 110A (Tc) @ 25°C
  • Maximum Power Dissipation: 176W (Tj)
  • Package: D2PAK (TO-263AB)
  • Mounting: surface-mounted
  • Maximum Rds On @ Id, Vgs: 1.8 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Max Gate Charge: 138nC @ 10V
  • Maximum Input Capacitance: 7710pF @ 25V
  • Designed for Use in: discrete semiconductor products.
  • Supply and Demand: In balance

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