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FDC6322C

Part No FDC6322C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 25V SSOT-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA, 460mA
Maximum Rds On at Id,Vgs 4 Ohm @ 400mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.7nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 700mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-6
Win Source Part Number 066918-FDC6322C
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDC6322C CAD Model

Description

FDC6322C

The FDC6322C is designed for applications where high-frequency power conversion is critical. This dual N-Channel PowerTrench MOSFET leverages advanced technologies to maximize switching capabilities.

  • Applications:
    • Power supply circuits
    • Pulse circuits
    • Power management in embedded systems
  • Features and Benefits:
    • Rapid Switching: Improves speed and precision in power conversion processes.
    • Low On-RDS: Enhances energy efficiency and reduces power loss.
    • Compact Design: Suits small form factor applications.

By incorporating the FDC6322C into designs, engineers can ensure their power management systems function with superior efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6456 $58.1040
220+ $0.5297 $116.5340
340+ $0.5132 $174.4880
470+ $0.4967 $233.4490
605+ $0.4800 $290.4000
810+ $0.4304 $348.6240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,214 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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