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FDC634

Part No FDC634
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel Enhancement Mode Field Effect Transistor
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1173739-FDC634
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDC634 CAD Model

Description

The FDC634 is a logic-level gate, single N-channel enhancement mode power MOSFET produced by Fairchild Semiconductor (now ON Semiconductor). It's designed to be driven directly from logic circuits without requiring additional driver components, simplifying design and reducing component count.

Applications

  • Load Switching: Ideal for switching power to various loads in electronic circuits.
  • Power Management: Used in battery-powered devices and other power-sensitive applications.
  • Logic-Level Interfacing: Enables direct interface between logic circuits and higher voltage/current loads.
  • Small Signal Amplification: Can be used in low-power amplifier circuits.
  • Solid State Relays: Implements solid-state relays for switching applications.

Features

  • Logic-Level Gate Drive: Can be driven directly from logic circuits (3V or 5V).
  • Low On-Resistance: Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Small Footprint: Available in a compact surface-mount package.
  • RoHS Compliant: Lead-free and compliant with environmental regulations.

Benefits

  • Simplified Circuit Design: Logic-level gate drive eliminates the need for external gate drivers.
  • Reduced Component Count: Integration simplifies the bill of materials and lowers cost.
  • Improved Efficiency: Low on-resistance minimizes power losses and improves overall efficiency.
  • Space Savings: Compact package allows for high-density circuit layouts.
  • Compliance: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The FDC634 typically features a drain-source voltage (VDS) rating in the range of 20-30V and a continuous drain current (ID) of several amperes, though this varies based on the specific sub-variant of the FDC634. The on-resistance (RDS(on)) is a key parameter, and is typically very low for a logic-level MOSFET, minimizing power dissipation. The device comes in a small surface mount package, such as SOT-23. The gate threshold voltage (VGS(th)) is specified to be compatible with standard logic voltage levels. The fast switching speed enables the MOSFET to be used in high frequency applications. This MOSFET is suitable for portable devices and battery-powered applications where efficiency and space are critical. The device is designed for reflow soldering processes. The part is commonly supplied on tape and reel for automated assembly.

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