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FDD18N20LZ

Part No FDD18N20LZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V DPAK-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1575pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038050-FDD18N20LZ
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD18N20LZ CAD Model

Description

This electronic component is a MOSFET transistor manufactured by Fairchild/ON Semiconductor, identified by the Win Source Part Number: 1038050-FDD18N20LZ.

  • Polarity: N-Channel
  • Power Dissipation: 89W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Rds On @ Id,Vgs: 125 mOhm @ 8A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7463 $52.3890
70+ $1.4329 $100.3030
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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