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Same model may have multiple batches, images only for reference.
FDD24AN06LA0_F085 Real Image
Same model may have multiple batches, images only for reference.

FDD24AN06LA0_F085

Part No FDD24AN06LA0_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 40A TO-252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038052-FDD24AN06LA0_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD24AN06LA0_F085 CAD Model

Description

The FDD24AN06LA0_F085 is an N-Channel MOSFET with a drain-source breakdown voltage of 60V. It is manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 7.1A @ 25°C
  • Maximum Rds On: 19 mOhm @ 40A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Input Capacitance: 1850pF @ 25V
  • Maximum Gate Charge: 21nC @ 5V
  • Power Dissipation: 75W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package Type: TO-252AA
  • Mounting Technology: SMD (SMT)

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