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Same model may have multiple batches, images only for reference.
FDD2612 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDD2612

Part No FDD2612
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 4.9A D-PAK
Datasheet
FDD2612 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 234pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Ta)
Maximum Rds On at Id,Vgs 720 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038056-FDD2612
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD2612 CAD Model

Description

This MOSFET is designed with an N-Channel polarity and has a maximum power dissipation of 42W (Ta).

  • Polarity: N-Channel
  • Maximum Power Dissipation: 42W (Ta)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 4.9A (Ta)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On at Id,Vgs: 720 mOhm @ 1.5A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Compliance: Halogen-Free
  • Temperature Range: -55°C to 175°C (TJ)

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