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Same model may have multiple batches, images only for reference.
FDD3570 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDD3570

Part No FDD3570
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 10A D-PAK
Datasheet
FDD3570 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 76nC @ 10V
Max Input Capacitance 2800pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.4W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038060-FDD3570
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD3570 CAD Model

Description

The Fairchild/ON Semiconductor 1038060-FDD3570 is an N-Channel MOSFET transistor that has a drain-source breakdown voltage of 80V.

  • Manufacturer: Fairchild/ON Semiconductor
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 10A, 10V
  • Mounting: SMD (SMT)
  • Package: TO-252
  • Maximum Power Dissipation: 3.4W (Ta) and 69W (Tc)
  • Drive Voltage: 6V (Max Rds On), 10V (Min Rds On)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate Charge: 76nC @ 10V
  • Maximum Input Capacitance: 2800pF @ 40V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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