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FDD3670

Part No FDD3670
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 34A D-PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2490pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 7.3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 139944-FDD3670
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD3670 CAD Model

Description

FDD3670 - High-Efficiency N-Channel MOSFET

The FDD3670 is an advanced N-Channel MOSFET widely appreciated for its role in energy-efficient electronic designs. It delivers outstanding performance across various power management tasks.

  • Applications:
    • Switching Mode Power Supplies (SMPS)
    • Converters
    • Load Switches
    • Inverter circuits
  • Features and Benefits:
    • Enhanced Gate Charge
    • Low Thermal Resistance
    • Improved Switching Performance
  • Additional Details:
    • Maximum Drain Current: 70A
    • Drain-Source Voltage: 100V
    • Package Type: TO-251

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3842 $55.3680
90+ $1.1358 $102.2220
140+ $1.1003 $154.0420
190+ $1.0648 $202.3120
245+ $1.0293 $252.1785
330+ $0.9228 $304.5240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,390 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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