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Same model may have multiple batches, images only for reference.
FDD850N10L Real Image
Same model may have multiple batches, images only for reference.

FDD850N10L

Part No FDD850N10L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 15.3A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 28.9nC @ 10V
Max Input Capacitance 1465pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-5
Dimension TO-252-5, DPak (4 Leads + Tab), TO-252AD
Win Source Part Number 066943-FDD850N10L
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD850N10L CAD Model

Description

The FDD850N10L is a N-channel MOSFET expertly engineered to deliver superior performance in power-switching applications. This component's design includes a low gate charge and low on-resistance, ensuring maximum efficiency.

Features and Benefits

  • Low gate charge enhances switching efficiency
  • Low on-resistance decreases power loss
  • Compact SMD package for space-constrained applications

Applications

  • Switching power supplies
  • Battery management systems
  • DC-DC converters

Employ the FDD850N10L in your projects to achieve optimal energy conservation and performance.

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