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Same model may have multiple batches, images only for reference.
FDD850N10LD Real Image
Same model may have multiple batches, images only for reference.

FDD850N10LD

Part No FDD850N10LD
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 15.3A DPAK
Datasheet
FDD850N10LD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 15.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 28.9nC @ 10V
Max Input Capacitance 1465pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-5
Dimension TO-252-5, DPak (4 Leads + Tab), TO-252AD
Win Source Part Number 1038118-FDD850N10LD
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD850N10LD CAD Model

Description

The Fairchild/ON Semiconductor FDD850N10LD is an N-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Polarity: N-Channel
  • Package: TO-252-5
  • Maximum Power Dissipation: 42W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 15.3A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 28.9nC @ 10V
  • Maximum Input Capacitance: 1465pF @ 25V
  • Maximum Rds On @ Id,Vgs: 75 mOhm @ 12A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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