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Same model may have multiple batches, images only for reference.
FDD8870_F085 Real Image
Same model may have multiple batches, images only for reference.

FDD8870_F085

Part No FDD8870_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 5160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038126-FDD8870_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD8870_F085 CAD Model

Description

The Fairchild/ON Semiconductor FDD8870_F085 is an N-channel MOSFET with a D-PAK (TO-252AA) package.

  • Maximum Power Dissipation: 160W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 21A @ 25°C
  • Maximum Rds On: 3.9 mOhm @ 35A, 10V
  • Product Category: Discrete semiconductor products
  • Market Popularity: Medium
  • Estimated EOL Date: 2031

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