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FDFS2P106A

Part No FDFS2P106A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 3A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 714pF @ 30V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 015973-FDFS2P106A
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDFS2P106A CAD Model

Description

FDFS2P106A

The FDFS2P106A is a high-performance, P-channel MOSFET that supports a voltage range up to -20V and a continuous drain current of -1.6A. Its low on-resistance makes it suitable for a range of power-saving applications.

Features and Benefits:

  • Low gate threshold voltage for ease of drive.
  • Enhanced thermal stability and reliability.
  • Efficient operation at high frequencies.

Applications:

  • Load switching applications.
  • Power management in laptops and tablets.
  • Power amplifier circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.6418 $57.8508
13+ $7.9112 $102.8456
20+ $7.6640 $153.2800
27+ $7.4168 $200.2536
35+ $7.1695 $250.9325
47+ $6.4279 $302.1113
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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