The SIA471DJ-T1-GE3 is a P-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

• Series: TrenchFET® Gen IV series
• Packaging: Tape & Reel
• Drain to Source Voltage (Vdss): 30 V
• Continuous Drain Current: 12.9A (Ta), 30.3A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250μA
• Maximum Gate Charge: 27.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
• Maximum Power Dissipation: 3.5W (Ta), 19.2W (Tc)
• Package: PowerPAK® SC-70-6
• Temperature Range: -55°C ~ 150°C (TJ)
• Ideal for: Transistors - FETs, MOSFETs - Single applications