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FDG311N

Name: FDG311N
Brand: Fairchild/ON Semiconductor
SKU: 129213
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	FDG311N
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 20V 1.9A SC70-6
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Gate-Source Threshold Voltage	1.5V @ 250μA
Max Gate Charge	4.5nC @ 4.5V
Max Input Capacitance	270pF @ 10V
Maximum Gate-Source Voltage	±8V
Power Dissipation (Max)	750mW (Ta)
Maximum Rds On at Id,Vgs	115 mOhm @ 1.9A, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SC-70-6
Dimension	6-TSSOP, SC-88, SOT-363
Win Source Part Number	015975-FDG311N
Popularity	Medium
Supply and Demand Status	Sufficient
Quantity per package	3k pcs
Ultra Librarian 3D Model	Ultra Librarian FDG311N CAD Model

Alternative Products

Description

FDG311N

The FDG311N is a compact N-channel MOSFET tailored for low-voltage applications, offering fast switching speeds and an efficient current delivery mechanism suitable for consumer electronics.

Features and Benefits:

High efficiency in low-voltage circuits.
Compact footprint for space-critical designs.
Robust performance across temperature ranges.

Applications:

Smartphones and tablets.
Wearable devices.
Wireless modules and connectivity solutions.

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