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Same model may have multiple batches, images only for reference.
FDG326P Real Image
Same model may have multiple batches, images only for reference.

FDG326P

Part No FDG326P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.5A SC70-6
Datasheet
FDG326P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 7nC @ 4.5V
Max Input Capacitance 467pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 140 mOhm @ 1.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 066952-FDG326P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDG326P CAD Model

Description

The Fairchild/ON Semiconductor FDG326P is a P-channel MOSFET with sufficient supply and demand.

  • Power Dissipation: 750mW (Ta)
  • Drive Voltage: 1.8V (max Rds On), 4.5V (min Rds On)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.5A (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Gate Charge: 7nC @ 4.5V
  • Package: SC-70-6
  • Mounting: Surface Mount
  • Status: Obsolete (EOL)
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1305 $58.0725
1,080+ $0.1074 $115.9920
1,670+ $0.1040 $173.6800
2,300+ $0.1005 $231.1500
2,945+ $0.0982 $289.1990
3,950+ $0.0878 $346.8100
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Availability: 38,203 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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