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FDH50N50_F133

Part No FDH50N50_F133
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 48A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 137nC @ 10V
Max Input Capacitance 6460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 136954-FDH50N50_F133
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDH50N50_F133 CAD Model

Description

The FDH50N50_F133 is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current (25°C): 48A
  • Rds On (Max) @ Id,Vgs: 105 mOhm @ 24A and 10V
  • Gate-Source Voltage (Max): ±20V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 137nC @ 10V
  • Maximum Input Capacitance: 6460pF @ 25V
  • Power Dissipation: 625W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247-3
  • Mounting Type: Through hole

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