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Same model may have multiple batches, images only for reference.
FDI2532 Real Image
Same model may have multiple batches, images only for reference.

FDI2532

Part No FDI2532
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 79A TO-262AB
Datasheet
FDI2532 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 8A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 5870pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK (TO-262)
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 204098-FDI2532
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDI2532 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance electronic component designed for use in various applications.

  • Polarity: N-Channel
  • Power Dissipation: 310W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Rds On (at Id,Vgs): 16 mOhm @ 33A, 10V
  • Package: I2PAK (TO-262) with TO-262-3 Long Leads, I2Pak, TO-262AA dimension
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4692 $58.7680
100+ $1.2058 $120.5800
150+ $1.1677 $175.1550
205+ $1.1307 $231.7935
265+ $1.0926 $289.5390
355+ $0.9794 $347.6870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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