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Same model may have multiple batches, images only for reference.
FDI33N25TU Real Image
Same model may have multiple batches, images only for reference.

FDI33N25TU

Part No FDI33N25TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 33A I2PAK / N-Channel 250 V 33A (Tc) 235W (Tc) Through Hole I2PAK (TO-262)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series UniFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2135 pF @ 25 V
Power Dissipation (Max) 235W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN EAR99
HTSUS 8541.29.0095
Other Names FAIFSCFDI33N25TU,2156-FDI33N25TU-FS
Standard Package 50
Win Source Part Number 1023950-FDI33N25TU
Ultra Librarian 3D Model Ultra Librarian FDI33N25TU CAD Model

Description

The FDI33N25TU is a UniFET™ series electronic component that can be used in various applications that require a MOSFET (Metal Oxide) technology.

  • Series: UniFET™
  • Technology: MOSFET
  • Manufacturer: Fairchild Semiconductor
  • Status: Obsolete
  • Supply Voltage: ±30V
  • Power Dissipation: 235W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25V
  • Mounting: Through-hole
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99

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