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LN60A01ES-LF

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Part No	LN60A01ES-LF
Manufacturer	Monolithic Power Systems Inc.
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 3N-CH 600V 0.08A 8SOIC / Mosfet Array 3 N-Channel, Common Gate 600V 80mA 1.3W Surface Mount 8-SOIC
Datasheet	LN60A01ES-LF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr	Monolithic Power Systems Inc.
Package	Tube
FET Type	3 N-Channel, Common Gate
FET Feature	Standard
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	80mA
Rds On (Max) @ Id, Vgs	190Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Power - Max	1.3W
Temperature Range - Operating	-20°C ~ 125°C (TJ)
Mounting	SMD (SMT)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
MSL Level	2 (1 Year)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	100
Win Source Part Number	1070445-LN60A01ES-LF
Ultra Librarian 3D Model	Ultra Librarian LN60A01ES-LF CAD Model

Alternative Products

Description

The LN60A01ES-LF is a N-Channel, Common Gate FET from Monolithic Power Systems Inc.

GPTDescription: It has a drain to source voltage of 600V and a continuous drain current of 80mA @ 25°C.
GPTDescription: It is also REACH unaffected and has an MSL level of 2 (1 Year).
GPTDescription: The part is ideal for use in electronic circuits that require FETs, MOSFETs, and arrays.

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