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Same model may have multiple batches, images only for reference.
FDI3632 Real Image
Same model may have multiple batches, images only for reference.

FDI3632

Part No FDI3632
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO-262AB
Datasheet
FDI3632 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK (TO-262)
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 066965-FDI3632
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDI3632 CAD Model

Description

The Fairchild/ON Semiconductor electronic component is a MOSFET with an N-Channel polarity.

  • Polarity: N-Channel
  • Power Dissipation: 310W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 12A (Ta), 80A (Tc)
  • Rds On (at Id,Vgs): 9 mOhm @ 80A, 10V
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8085 $60.6375
175+ $0.6630 $116.0250
270+ $0.6433 $173.6910
375+ $0.6225 $233.4375
480+ $0.6018 $288.8640
645+ $0.5394 $347.9130
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Availability: 22,000 pieces
MOQ: 75 pcs
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