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FDMB3800N

Part No FDMB3800N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4.8A MICROFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.8A
Maximum Rds On at Id,Vgs 40 mOhm @ 4.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 5.6nC @ 5V
Max Input Capacitance 465pF @ 15V
Maximum Power Dissipation 750mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MLP, MicroFET (3x1.9)
Win Source Part Number 098305-FDMB3800N
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMB3800N CAD Model

Description

The FDMB3800N is a dual N-Channel logic level gate FET manufactured by Fairchild/ON Semiconductor. It has a Win Source Part Number of 098305-FDMB3800N and is a part of the Discrete Semiconductor Products category.

  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 750mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 4.8A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Max): 5.6nC @ 5V
  • Input Capacitance (Max): 465pF @ 15V
  • Rds On (Max) @ Id,Vgs: 40 mOhm @ 4.8A, 10V
  • Supply and Demand: Sufficient
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67,750 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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