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FDME820NZT

Part No FDME820NZT
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 9A MICROFET 1.6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 8.5nC @ 4.5V
Max Input Capacitance 865pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.1W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MicroFet 1.6x1.6 Thin
Dimension 6-PowerUFDFN
Win Source Part Number 1038215-FDME820NZT
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5k pcs
Ultra Librarian 3D Model Ultra Librarian FDME820NZT CAD Model

Description

The Fairchild/ON Semiconductor FDME820NZT is an N-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 9A @ 25°C.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 9A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 8.5nC @ 4.5V
  • Package: MicroFet 1.6x1.6 Thin
  • Dimension: 6-PowerUFDFN
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 9A, 4.5V
  • Maximum Input Capacitance: 865pF @ 10V
  • Supply and Demand Status: Sufficient
  • Quantity per Package: 5k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4335 $52.0200
250+ $0.4056 $101.4000
385+ $0.3916 $150.7660
555+ $0.3636 $201.7980
720+ $0.3496 $251.7120
895+ $0.3357 $300.4515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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