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FDME910PZT

Part No FDME910PZT
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P CH 20V 8A MICROFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 21nC @ 4.5V
Max Input Capacitance 2110pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.1W (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MicroFet 1.6x1.6 Thin
Dimension 6-PowerUFDFN
Win Source Part Number 016048-FDME910PZT
Popularity Medium
Supply and Demand Status Balance
Quantity per package 5k pcs
Ultra Librarian 3D Model Ultra Librarian FDME910PZT CAD Model

Description

The Fairchild/ON Semiconductor FDME910PZT is a MOSFET transistor with a P-Channel polarity.

  • Polarity: P-Channel
  • Maximum Power Dissipation: 2.1W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 21nC @ 4.5V
  • Maximum Input Capacitance: 2110pF @ 10V
  • Maximum Rds On: 24 mOhm @ 8A, 4.5V
  • Suitable for: Discrete Semiconductor Products
  • Supply and Demand: Balance
  • Package Quantity: 5k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2758 $57.9180
515+ $0.2264 $116.5960
790+ $0.2194 $173.3260
1,090+ $0.2122 $231.2980
1,410+ $0.2051 $289.1910
1,885+ $0.1839 $346.6515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,285 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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