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Same model may have multiple batches, images only for reference.
FDMS3626S Real Image
Same model may have multiple batches, images only for reference.

FDMS3626S

Part No FDMS3626S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 17.5A/25A 8PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 17.5A, 25A
Maximum Rds On at Id,Vgs 5 mOhm @ 17.5A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1570pF @ 13V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 016065-FDMS3626S
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3626S CAD Model

Description

The FDMS3626S from Fairchild/ON Semiconductor is a 2 N-Channel (Dual) Asymmetrical FET with a logic level gate.

  • Product Type: FET
  • Case/Package: Power56
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current (25°C): 17.5A / 25A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 1570pF @ 13V
  • Maximum Rds On (Id, Vgs): 5 mOhm @ 17.5A, 10V
  • Quantity per Package: 3k pcs

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Quantity Unit Price Ext. Price
65+ $0.9013 $58.5845
160+ $0.7396 $118.3360
245+ $0.7165 $175.5425
335+ $0.6934 $232.2890
435+ $0.6703 $291.5805
580+ $0.6010 $348.5800
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Availability: 2,550 pieces
MOQ: 65 pcs
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