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Same model may have multiple batches, images only for reference.
FDMS3669S Real Image
Same model may have multiple batches, images only for reference.

FDMS3669S

Part No FDMS3669S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 13A/18A PWR56
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A, 18A
Maximum Rds On at Id,Vgs 10 mOhm @ 13A, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1605pF @ 15V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 016069-FDMS3669S
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3669S CAD Model

Description

The Fairchild/ON Semiconductor 016069-FDMS3669S is a 2 N-Channel (Dual) Asymmetrical FET that features a Logic Level Gate.

  • Product Type: FET
  • Package: Power56
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 13A / 18A
  • Gate-Source Threshold Voltage: 2.7V @ 250μA
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Input Capacitance: 1605pF @ 15V
  • Maximum Rds On (Id, Vgs): 10 mOhm @ 13A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand: Limited
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2767 $63.8350
115+ $1.0476 $120.4740
175+ $1.0148 $177.5900
240+ $0.9821 $235.7040
305+ $0.9493 $289.5365
410+ $0.8512 $348.9920
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Availability: 2,700 pieces
MOQ: 50 pcs
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