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FDMS6673BZ

Part No FDMS6673BZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 15.2A POWER56
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15.2A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 5915pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 73W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 15.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Dimension 8-PowerTDFN
Win Source Part Number 134625-FDMS6673BZ
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS6673BZ CAD Model

Description

The 134625-FDMS6673BZ is a P-channel MOSFET manufactured by Fairchild/ON Semiconductor. It is designed for SMD (SMT) mounting and is categorized under discrete semiconductor products.

  • Power Dissipation: 2.5W (Ta), 73W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15.2A (Ta), 28A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 130nC @ 10V
  • Maximum Rds On: 6.8 mOhm @ 15.2A, 10V
  • Package: 8-PowerTDFN
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Input Capacitance: 5915pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4497 $57.9880
100+ $1.1896 $118.9600
155+ $1.1524 $178.6220
210+ $1.1152 $234.1920
270+ $1.0780 $291.0600
360+ $0.9665 $347.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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