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FDMS8660S Real Image FDMS8660S real image4073
Same model may have multiple batches, images only for reference.
FDMS8660S Real Image FDMS8660S real image4073
FDMS8660S Real Image FDMS8660S real image4073
Same model may have multiple batches, images only for reference.

FDMS8660S

Part No FDMS8660S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A POWER56
Datasheet
FDMS8660S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 113nC @ 10V
Max Input Capacitance 4345pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Dimension 8-PowerTDFN
Win Source Part Number 112554-FDMS8660S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDMS8660S CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel power MOSFET.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 25A @ 25°C
  • On-Resistance: 2.4 mOhm @ 25A, 10V
  • Maximum Gate Charge: 113nC @ 10V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 2.5W (Ta) / 83W (Tc)
  • Package: 8-PowerTDFN
  • Mounting Technology: Surface Mount Technology (SMT)
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Obsolete (EOL)

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110+ $1.0591 $116.5010
170+ $1.0268 $174.5560
235+ $0.9933 $233.4255
305+ $0.9598 $292.7390
405+ $0.8605 $348.5025
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