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FDN352AP

Part No FDN352AP
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.3A SSOT-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 1.9nC @ 4.5V
Max Input Capacitance 150pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 180 mOhm @ 1.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 016108-FDN352AP
Family Name FDN352AP
Introduction Date April 21, 2005
ECCN EAR99
Country of Origin Israel, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Computers & Computer Peripherals, Power Management
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDN352AP CAD Model

Description

The FDN352AP is a P-channel MOSFET from Fairchild/ON Semiconductor. The MOSFET has a supply and demand balance and is active.

  • Maximum Power Dissipation: 500mW
  • Continuous Drain Current: 1.3A @ 25°C
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Package: SuperSOT-3
  • Quantity: 3k pcs per package

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1742 $50.5180
700+ $0.1430 $100.1000
1,085+ $0.1385 $150.2725
1,495+ $0.1340 $200.3300
1,930+ $0.1296 $250.1280
2,585+ $0.1162 $300.3770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 123,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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