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Same model may have multiple batches, images only for reference.
FDP020N06B Real Image
Same model may have multiple batches, images only for reference.

FDP020N06B

Part No FDP020N06B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO-220-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 268nC @ 10V
Max Input Capacitance 20930pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 333W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204100-FDP020N06B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDP020N06B CAD Model

Description

The FDP020N06B is an N-channel MOSFET designed by Fairchild/ON Semiconductor. The FDP020N06B has a balanced supply and demand status and is an active product. This MOSFET is suitable for a wide range of applications, including motor drive and control, power management, and audio.

  • Drain-Source Breakdown Voltage (Max): 60V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate Charge (Max): 268nC @ 10V
  • Rds On (Max) @ Id,Vgs: 2 mOhm @ 100A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.8325 $53.1575
26+ $3.9652 $103.0952
40+ $3.8413 $153.6520
54+ $3.7173 $200.7342
70+ $3.5934 $251.5380
94+ $3.2217 $302.8398
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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