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Same model may have multiple batches, images only for reference.
FDP025N06 Real Image
Same model may have multiple batches, images only for reference.

FDP025N06

Part No FDP025N06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 226nC @ 10V
Max Input Capacitance 14885pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 395W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 204102-FDP025N06
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FDP025N06 CAD Model

Description

The Fairchild/ON Semiconductor FDP025N06 is an N-channel MOSFET integrated circuit that is designed for use in a variety of applications such as power supplies, motor control, and lighting. It has limited supply and demand status and a medium popularity rating. It is a reliable and efficient option for those in need of an N-channel MOSFET integrated circuit.

  • Power Dissipation: 395W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 120A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2199 $54.8955
100+ $1.0010 $100.1000
155+ $0.9697 $150.3035
215+ $0.9384 $201.7560
280+ $0.9071 $253.9880
370+ $0.8133 $300.9210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 108 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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