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Same model may have multiple batches, images only for reference.
FDP053N08B Real Image
Same model may have multiple batches, images only for reference.

FDP053N08B

Part No FDP053N08B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 75A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 5960pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 146W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067012-FDP053N08B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDP053N08B CAD Model

Description

The Fairchild/ON Semiconductor FDP053N08B is a high-performance N-channel MOSFET designed for various applications such as power supplies, DC-DC converters, and motor control.

  • Maximum Power Dissipation: 146W (Tc)
  • Continuous Drain Current: 75A (Tc) at 25°C
  • Drain-Source Breakdown Voltage: 80V
  • Maximum Rds On: 5.3 mOhm at Id, Vgs of 75A, 10V
  • Gate-Source Threshold Voltage: 4.5V at 250μA
  • Maximum Gate Charge: 85nC at 10V
  • Package: TO-220-3
  • Operating Temperature: -55°C to 175°C (TJ)

The FDP053N08B is a reliable and efficient MOSFET that can be used in various applications.

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Quantity Unit Price Ext. Price
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35+ $3.3102 $115.8570
55+ $3.2074 $176.4070
75+ $3.1035 $232.7625
97+ $2.9995 $290.9515
129+ $2.6900 $347.0100
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