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Same model may have multiple batches, images only for reference.
FDP090N10 Real Image
Same model may have multiple batches, images only for reference.

FDP090N10

Part No FDP090N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-220
Datasheet
FDP090N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 116nC @ 10V
Max Input Capacitance 8225pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067015-FDP090N10
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP090N10 CAD Model

Description

The Fairchild/ON Semiconductor 067015-FDP090N10 is an N-channel MOSFET with a drain-source breakdown voltage of 100V.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A (Tc) at 25°C
  • Power Dissipation: 208W (Tc)
  • Mounting: Through-hole
  • Operating Temperature: -55°C to 175°C (TJ)
  • Case: TO-220-3
  • Gate-Source Threshold Voltage: 4.5V at 250μA
  • Maximum Gate Charge: 116nC at 10V
  • Maximum Rds On: 9 mOhm at 75A, 10V

The 067015-FDP090N10 is an active product with high popularity. The package contains 800 pieces.

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Pricing & Ordering

Quantity Unit Price Ext. Price
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35+ $2.9065 $101.7275
54+ $2.8157 $152.0478
74+ $2.7249 $201.6426
95+ $2.6340 $250.2300
128+ $2.3616 $302.2848
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Availability: 284 pieces
MOQ: 15 pcs
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